MSS1P4(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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MSS1P4 Datasheet PDF : 4 Pages
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New Product
MSS1P3 & MSS1P4
Vishay General Semiconductor
10
TJ = 150 °C
1 TJ = 125 °C
TJ = 25 °C
0.1
1000
100
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
TJ = 150 °C
1
TJ = 125 °C
1000
100
Junction to Ambient
0.1
0.01
TJ = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
1000
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
MicroSMP
Cathode Band
0.059 (1.50)
0.043 (1.10)
0.030 (0.75)
0.022 (0.55)
0.055 (1.40)
0.047 (1.20)
0.039 (0.98)
0.031 (0.78)
0.030 (0.75)
0.022 (0.55)
0.091 (2.30)
0.083 (2.10)
0.106 (2.70)
0.091 (2.30)
Mounting Pad Layout
0.079
(2.00)
0.032
(0.80)
0.029 (0.73)
0.025 (0.63)
0.011 (0.27)
0.005 (0.12)
0.043
(1.10)
0.020
(0.50)
0.032
(0.80)
Document Number: 89019 For technical questions within your region, please contact one of the following:
Revision: 04-Aug-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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