MT4C4M4A1DJ-6 데이터 시트보기 (PDF) - Micron Technology
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MT4C4M4A1DJ-6 Datasheet PDF : 20 Pages
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AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) [Vcc (MIN) £ Vcc £ Vcc (MAX)]
AC CHARACTERISTICS
PARAMETER
Refresh period “S” version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWP
tWRH
tWRP
-5
MIN
MAX
128
30
5
90
0
13
116
67
13
2
50
8
38
0
5
8
8
4 MEG x 4
FPM DRAM
-6
MIN
MAX
128
40
5
105
0
15
140
79
15
2
50
10
45
0
5
10
10
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
140
16
19
18
4, 23
4, 23
4 Meg x 4 FPM DRAM
D49_5V.p65 – Rev. 5/00
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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