IS61LV6416-10BI 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61LV6416-10BI

64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61LV6416

IS61LV6416L

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

Parameter

VDD for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.0V, CE ≥ VDD – 0.2V

tSDR

Data Retention Setup Time See Data Retention Waveform

tRDR

Recovery Time

See Data Retention Waveform

Note 1: Typical values are measured at VDD = 3.0V, TA = 25OC and not 100% tested.

Options

IS61LV6416

IS61LV6416L

ISSI ®

Min. Typ.(1) Max. Unit

2.0

—

3.6

V1

—

0.5

10

mA

—

0.05 1.5

0

2 —

—

ns

tRC

—

—

ns

3

4

DATA RETENTION WAVEFORM (CE Controlled)

5

tSDR

Data Retention Mode

tRDR

VDD

6

VDR

7

CE ≥ VDD - 0.2V

CE

GND

8

9

10

11

12

Integrated Silicon Solution, Inc.

11

Rev. I

11/22/05

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