CY7C0430V-133BGC 데이터 시트보기 (PDF) - Cypress Semiconductor
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CY7C0430V-133BGC Datasheet PDF : 36 Pages
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PRELIMINARY
CY7C0430V
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ............................................–55°C to + 125°C
Supply Voltage to Ground Potential .............. –0.5V to + 4.6V
DC Voltage Applied to
Outputs in High Z State............................–0.5V to VCC+0.5V
DC Input Voltage ..................................... –0.5V to VCC+0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ........................................... >2001V
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
VDD
3.3V ± 150 mV
3.3V ± 150 mV
Electrical Characteristics Over the Operating Range
Parameter
VOH
VOL
VIH
VIL
IOZ
ICC
ISB1
ISB2
ISB3
ISB4
Description
Output HIGH Voltage
(VCC = Min., IOH = –4.0 mA)
Output LOW Voltage
(VCC = Min., IOH = +4.0 mA)
Input HIGH Voltage
Input LOW Voltage
Output Leakage Current
Operating Current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Standby Current (4 Ports toggling
at TTL Levels,0 active) CE1-4 ≥
VIH, f = fMAX
Standby Current (4 Ports toggling
at TTL Levels, 1 active) CE1 | CE2
| CE3 | CE4 < VIH, f = fMAX
Standby Current (4 Ports CMOS
Level, 0 active) CE1-4 ≥ VIH, f = 0
Standby Current (3 Ports CMOS
Level, 1 Port TTL active) CE1 |
CE2 | CE3 | CE4 < VIH, f = fMAX
Indust.
Com’l.
Indust.
Com’l.
Indust.
Com’l.
Indust.
Com’l.
Indust.
Com’l.
Min.
2.4
2.0
–10
-133
Typ
413
80
170
0.5
110
CY7C0430V
Max Min.
2.4
0.4
2.0
0.8
10
–10
750
200
349
1
200
-100
Typ
330
60
128
0.5
83
Max
0.4
0.8
10
600
150
263
1
151
Unit
V
V
V
V
µA
mA
mA
mA
mA
mA
mA
mA
µA
mA
mA
JTAG TAP Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
VOH1
VOL1
VIH
VIL
IX
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
IOH = −4.0 mA
IOL = 4.0 mA
Input LOW Voltage
Input Leakage Current GND ≤ VI ≤ VDD
Capacitance
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 3.3V
Min.
2.4
2.0
–100
Max. Unit
V
0.4
V
V
0.8
V
100
µA
Max.
Unit
8
pF
8
pF
7
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