MTD6505T 데이터 시트보기 (PDF) - Microchip Technology

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MTD6505T

3-Phase Sinusoidal Sensorless Brushless Motor Driver

Microchip Technology 

MTD6505

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Power Supply Voltage (VDD_MAX) ...................... -0.7 to +7.0V

Maximum Output Voltage (VOUT_MAX) ............... -0.7 to +7.0V

Maximum Output Current(1) (IOUT_MAX) ....................1000 mA

FG Maximum Output Voltage (VFG_MAX) ........... -0.7 to +7.0V

FG Maximum Output Current (IFG_MAX) ......................5.0 mA

VBIAS Maximum Voltage (VBIAS_MAX) ................ -0.7 to +4.0V

PWM Maximum Voltage (VPWM_MAX) ................ -0.7 to +7.0V

Allowable Power Dissipation(2)(PD_MAX).........................1.5W

Maximum Junction Temperature (TJ) .......................... +150°C

ESD protection on all pins 2 kV

ELECTRICAL CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated in the operational listings of this specification

is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

Note 1: IOUT is also internally limited, according

to the limits defined in the “Electrical

Characteristics” table.

2: Reference Printed Circuit Board (PCB),

according to JEDEC standard EIA/JESD

51-9.

Electrical Specifications: Unless otherwise specified, all limits are established for VDD = 2.0V to 5.5V, TA = +25°C

Parameters

Sym.

Min.

Typ.

Max. Units

Conditions

Power Supply Voltage

VDD

2

Power Supply Current

IVDD

—

Standby Current

IVDD_STB

—

—

5.5

V

5

10

mA VDD = 5V

30

40

µA PWM = 0V, VDD = 5V

(Standby mode)

OUTX

High Resistance

RON(H)

—

0.75

1.1

Ω

IOUT = 0.5A, VDD = 5V

Note 1

OUTX

Low Resistance

RON(L)

—

0.75

1.3

Ω

IOUT = 0.5A, VDD = 5V

Note 1

OUTX

Total Resistance

RON(H+L)

—

1.5

2.4

Ω

IOUT = 0.5A, VDD = 5V

Note 1

VBIAS Internal

Supply Voltage

VBIAS

—

3

—

—

VDD – 0.2

—

V

VDD = 3.2V to 5.5V

V

VDD < 3.2V

PWM Input Frequency

fPWM

1

—

100

kHz

PWM Input H Level

VPWM_H 0.55  VDD

—

VDD

V

VDD  4.5V

PWM Input L Level

VPWM_L

0

—

0.2  VDD

V

VDD  4.5V

PWM Internal Pull-Up

RPWM_0

—

Resistor

266

—

kΩ PWM = 0V

PWM Internal Pull-Up

RPWM

—

Resistor

133

—

kΩ PWM duty-cycle > 0%

DIR Input H Level

VDIR_H VBIAS – 0.5

—

VBIAS

V

VDD  4.5V

DIR Input L Level

VDIR_L

0

—

0.2  VDD

V

VDD  4.5V

DIR Internal Pull-Down

RDIR

100

Resistor

—

200

kΩ

FG Output Pin Low-

VOL_FG

—

Level Voltage

—

0.25

V

IFG = -1 mA

FG Output Pin Leakage ILH_FG

– 10

—

10

µA VFG = 5.5V

Current

Lock Protection

Operating Time

TRUN

—

0.5

—

s

Lock Protection Waiting TWAIT

4.5

Time

5

5.5

s

Note 2

Overcurrent Protection IOC_MOT

—

Overvoltage Protection

VOV

—

750

—

mA Note 3

7.2

—

V

 2011-2014 Microchip Technology Inc.

DS20002281C-page 5

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