MTP1N80E 데이터 시트보기 (PDF) - Motorola => Freescale
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MTP1N80E Datasheet PDF : 8 Pages
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2.0 TJ = 25°C
1.6
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 10 V
6V
8V
2.0
VDS ≥ 10 V
1.6
1.2
MTP1N80E
0.8
5V
0.4
4V
0
0
5
10
15
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
0.8
TJ = 100°C
0.4
25°C
0
2.0 2.5 3.0
3.5 4.0
–55°C
4.5 5.0 5.5 6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
18
VGS = 10 V
15
12
9
100°C
TJ = 25°C
6
–55°C
3
0
0 0.25 0.50 0.75 1.0 1.25 1.50 1.75 2.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
16
TJ = 25°C
15
14
13
12
VGS = 10 V
11
15 V
10
9
0
0.4
0.8
1.2
1.6
2.0
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
ID = 0.5 A
2
1.5
1
0.5
0
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
10
1
TJ = 125°C
100°C
25°C
0.1
0 100 200 300 400 500 600 700 800
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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