MTSF3N02HD 데이터 시트보기 (PDF) - Motorola => Freescale

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MTSF3N02HD

TMOS Single N-Channel Field Effect Transistor

Motorola => Freescale 

di/dt = 300 A/µs

Standard Cell Density

trr

High Cell Density

trr

ta

tb

MTSF3N02HD

t, TIME

Figure 13. Reverse Recovery Time (trr)

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define the

maximum simultaneous drain–to–source voltage and drain cur-

rent that a transistor can handle safely when it is forward biased.

Curves are based upon maximum peak junction temperature

and a case temperature (TC) of 25°C. Peak repetitive pulsed

power limits are determined by using the thermal response data

in conjunction with the procedures discussed in AN569, “Tran-

sient Thermal Resistance – General Data and Its Use.”

Switching between the off–state and the on–state may

traverse any load line provided neither rated peak current

(IDM) nor rated voltage (VDSS) is exceeded, and that the

transition time (tr, tf) does not exceed 10 µs. In addition

the total power averaged over a complete switching cycle

must not exceed (TJ(MAX) – TC)/(RθJC).

100

VGS = 8 V

SINGLE PULSE

TC = 25°C

10

100 µs

1 ms

10 ms

1

dc

0.1

0.01

0.1

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

1

10

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 14. Maximum Rated Forward Biased

Safe Operating Area

Motorola TMOS Power MOSFET Transistor Device Data

7

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