MTY14N100E 데이터 시트보기 (PDF) - Motorola => Freescale

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MTY14N100E

TMOS E-FET Power Field Effect Transistor

Motorola => Freescale 

MTY14N100E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0, ID = 0.250 mAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 1000 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.250 mAdc)

Threshold Temperature Coefficient (Negative)

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.0 Adc)

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 14 Adc)

(VGS = 10 Vdc, ID = 7.0 Adc, TJ = 125°C)

Forward Transconductance (VDS ≥ 15 Vdc, ID = 7.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 500 Vdc, ID = 14 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 500 Vdc, ID = 14 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 14 Adc, VGS = 0 Vdc)

(IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(See Figure 14)

(IS = 14 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

LD

LS

Min

1000

—

—

—

—

2.0

—

—

—

—

10

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

1.0

—

—

—

3.3

9.0

0.67

12.3

—

12

7230

462

61

49

98

132

83

142

34

46

56

1.36

1.26

831

364

467

15.3

4.5

13

Max

Unit

Vdc

—

—

V/°C

µAdc

10

100

100

nAdc

Vdc

4.0

—

mV/°C

0.8

Ohm

Vdc

13.4

11.8

—

mhos

pF

ns

nC

—

—

—

Vdc

1.5

—

—

ns

—

—

—

µC

nH

—

nH

—

2

Motorola TMOS Power MOSFET Transistor Device Data

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