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DTA123JE(2012) 데이터 시트보기 (PDF) - ON Semiconductor

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DTA123JE
(Rev.:2012)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
DTA123JE Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5135)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
Thermal Characteristics (SC75) (DTA123JE)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
Thermal Characteristics (SOT723) (DTA123JM3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
Thermal Characteristics (SOT1123) (NSBA123JF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
202
310
1.6
2.5
618
403
280
332
55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
55 to +150
mW
mW/°C
°C/W
°C
254
297
2.0
2.4
493
421
193
55 to +150
mW
mW/°C
°C/W
°C/W
°C
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