NT5SV16M4DT 데이터 시트보기 (PDF) - Nanya Technology

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NT5SV16M4DT

64Mb Synchronous DRAM

Nanya Technology 

NT5SV16M4DT

NT5SV8M8DT

NT5SV4M16DT

64Mb Synchronous DRAM

DC Electrical Characteristics (TA = 0 to +70°C, VDD = 3.3V ±0.3V)

Symbol

Parameter

II(L)

Input Leakage Current, any input

(0.0V ≤ VIN ≤ VDD), All Other Pins Not Under Test = 0V

IO(L)

Output Leakage Current

(DOUT is disabled, 0.0V ≤ VOUT ≤ VDDQ)

VOH

Output Level (LVTTL)

Output “H” Level Voltage (IOUT = -2.0mA)

VOL

Output Level (LVTTL)

Output “L” Level Voltage (IOUT = +2.0mA)

DC Output Load Circuit

Min.

Max.

-1

+1

-1

+1

2.4

—

—

0.4

Output

50pF

3.3 V

1200Ω

870Ω

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

Units

µA

µA

V

V

REV 1.1

10/01

14

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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