NT5SV16M4DT 데이터 시트보기 (PDF) - Nanya Technology

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NT5SV16M4DT

64Mb Synchronous DRAM

Nanya Technology 

NT5SV16M4DT

NT5SV8M8DT

NT5SV4M16DT

64Mb Synchronous DRAM

Read Cycle

Symbol

Parameter

tOH Data Out Hold Time

tLZ

tHZ3

tHZ2

tDQZ

Data Out to Low Impedance Time

Data Out to High Impedance Time

Data Out to High Impedance Time

DQM Data Out Disable Latency

-6K

Min. Max.

—

3

—

—

2.7

5.4

2.7

5.4

2

—

-7K

Min. Max.

—

—

3

—

0

—

2.7

5.4

2.7

5.4

2

—

-7

Min. Max.

—

—

3

—

0

—

2.7

5.4

3

6

2

—

1. AC Output Load Circuit A.

2. AC Output Load Circuit B.

3. Referenced to the time at which the output achieves the open circuit condition, not to output voltage levels.

4. Data Out Hold Time with no load must meet 1.8ns (-5K, -7K, -75B).

Units

ns

ns

ns

ns

ns

CK

Notes

1

2, 4

3

3

Refresh Cycle

Symbol

Parameter

tREF

tSREX

Refresh Period

Self Refresh Exit Time

1. 4096 auto refresh cycles.

-6K

Min. Max.

—

64

10

—

-7K

Min. Max.

—

64

10

—

-7

Min. Max.

—

64

10

—

Units

ms

ns

Notes

1

Write Cycle

Symbol

Parameter

tDS

tDH

tDPL

tWR

tDAL3

tDAL2

tDQW

Data In Set-up Time

Data In Hold Time

Data input to Precharge

Write Recovery Time

Data In to Active Delay

CAS Latency = 3

Data In to Active Delay

CAS Latency = 2

DQM Write Mask Latency

-6K

Min. Max.

1.5

—

0.8

—

12

—

12

—

5

—

-7K

Min. Max.

1.5

—

0.8

—

14

—

14

—

5

—

-7

Min. Max.

1.5

—

0.8

—

14

—

14

—

5

—

4

—

0

—

4

—

0

—

4

—

—

Units

ns

ns

ns

ns

CK

CK

CK

REV 1.1

10/01

18

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NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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