BLW97 데이터 시트보기 (PDF) - Philips Electronics
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BLW97 Datasheet PDF : 11 Pages
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Philips Semiconductors
HF power transistor
Product specification
BLW97
DESCRIPTION
N-P-N silicon planar epitaxial
transistor designed for use in class-A,
AB and B operated high-power
industrial and military transmitting
equipment in the h.f. band.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand
severe load-mismatch conditions. All
leads are isolated from the flange.
The transistors are supplied in
matched hFE groups.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
VCE
V
s.s.b.
(class-AB)
28
PIN CONFIGURATION
handbook, halfpage 4
IC(ZS)
A
0,1
f
PL
MHz
W
1,6 − 28 175 (PEP)
Gp
dB
> 11,5
ηdt
%
> 40
d3
dB
< −30
d5
dB
< −30
PINNING - SOT121B.
PIN
DESCRIPTION
3
1 collector
2 emitter
3 base
4 emitter
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
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