BLW97 데이터 시트보기 (PDF) - Philips Electronics
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BLW97 Datasheet PDF : 11 Pages
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Philips Semiconductors
HF power transistor
Product specification
BLW97
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (peak value)
VBE = 0
open base
Emitter-base voltage (open collector)
Collector current
VCESM
VCEO
VEBO
average
peak value; f > 1 MHz
Total d.c. power dissipation at Th = 25°C
R.F. power dissipation
f > 1 MHz; Th = 25°C
Storage temperature
Operating junction temperature
IC(AV)
ICM
Ptot(d.c.)
Ptot(rf)
Tstg
Tj
max.
max.
max.
65 V
33 V
4V
max.
max.
max.
15 A
50 A
190 W
max.
230 W
−65 to + 150 °C
max.
200 °C
102
handbook, halfpage
IC
(A)
10
MGP703
Th = 70 °C
Tmb = 25 °C
350
handbook, halfpage
Ptot
(W)
250
ΙΙΙ
ΙΙ
150
Ι
MGP704
1
1
10
VCE (V)
102
Fig.2 D.C. SOAR.
50
0
40
80 Th (°C) 120
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 Mhz).
III Short-time operation during mismatch; (f > 1 MHz).
Fig.3 Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 120 W; Th = 25 °C i.e. Tmb = 49 °C)
From junction to mounting base
(d.c. dissipation)
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
August 1986
3
Rth j-mb(dc)
=
Rth j-mb(rf)
=
Rth mb-h
=
0,63 K/W
0,48 K/W
0,20 K/W
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