BLW97 데이터 시트보기 (PDF) - Philips Electronics

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BLW97

HF power transistor

Philips Electronics 

Philips Semiconductors

HF power transistor

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector-emitter breakdown voltage

VBE = 0; IC = 50 mA

IC = 100 mA; open base

Emitter-base breakdown voltage

IE = 20 mA; open collector

Collector cut-off current

VCE = 33 V; VBE = 0

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

RBE = 10 Ω

D.C. current gain(1)

IC = 10 A; VCE = 5 V

D.C. current gain ratio of matched devices(1)

IC = 10 A; VCE = 5 V

Collector-emitter saturation voltage(1)

IC = 25 A; IB = 5 A

Transition frequency at f = 100 MHz(2)

−IE = 10 A; VCB = 28 V

−IE = 20 A; VCB = 28 V

Collector capacitance at f = 1 MHz

IE = ie = 0; VCB = 28 V

Feedback capacitance at f = 1 MHz

IC = 0; VCE = 28 V

Collector-flange capacitance

Notes

1. Measured under pulse conditions: tp = 500 µs.

2. Measured under pulse conditions: tp = 300 µs; δ = 0,02.

Product specification

BLW97

V(BR)CES

V(BR)CEO

V(BR)EBO

ICES

ESBO

ESBR

hFE

hFE1/hFE2

VCEsat

fT

fT

Cc

Cre

Ccf

>

65 V

>

33 V

>

4V

<

20 mA

>

20 mJ

>

20 mJ

typ.

30

15 to 50

<

1,2

typ. 2,4 V

typ. 230 MHz

typ. 235 MHz

typ. 380 pF

typ. 235 pF

typ. 4,5 pF

August 1986

4

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