Philips Semiconductors
HF power transistor
Product specification
BLW97
handbook, h4alfpage
ri, −xi
ri
(Ω)
−xi
2
MGP713
typ
handbook, h1alfpage
ri, xi
(Ω)
0.5
0
xi
ri
typ
MGP714
0
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 0,1 A;
PL = 175 W(PEP); Th = 25 °C;
ZL = 1,55 Ω
Fig.12 Input impedance (series components).
−0.5
25
75
f (MHz)
125
VCE = 28 V; PL = 175 W; Th = 25 °C;
class-B operation.
Fig.13 Input impedance (series components).
handbook, h3alfpage
RL
(Ω)
2
MGP715
1.5
XL
(Ω)
RL
1.0
20
handbook, halfpage
GP
(dB)
15
MGP716
typ
1
0.5
XL
0
25
75
f (MHz)
VCE = 28 V; PL = 175 W; Th = 25 °C;
class-B operation.
0
125
Fig.14 Load impedance (series components).
typ
10
5
25
75
f (MHz)
125
VCE = 28 V; PL = 175 W; Th = 25 °C;
class-B operation.
Fig.15 Power gain.
August 1986
9