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BFX30 데이터 시트보기 (PDF) - Philips Electronics
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BFX30
PNP switching transistor
Philips Electronics
BFX30 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T
amb
≤
25
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R
th j-a
thermal resistance from junction to ambient in free air
Product specification
BFX30
MIN.
−
−
−
−
−
−
−
−
65
−
−
65
MAX.
−
65
−
65
−
5
−
600
−
600
−
200
600
+150
200
+150
UNIT
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
VALUE
300
UNIT
K/W
1997 Apr 16
3
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