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BFX30 데이터 시트보기 (PDF) - Philips Electronics

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BFX30
Philips
Philips Electronics Philips
BFX30 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP switching transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient in free air
Product specification
BFX30
MIN.
65
65
MAX.
65
65
5
600
600
200
600
+150
200
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
VALUE
300
UNIT
K/W
1997 Apr 16
3

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