MWI150-12T8T 데이터 시트보기 (PDF) - IXYS CORPORATION
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MWI150-12T8T Datasheet PDF : 7 Pages
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Temperature Sensor NTC
Symbol
R25
B25/50
Definitions
resistance
Conditions
Module
Symbol
TVJ
TVJM
Tstg
VISOL
CTI
Md
dS
dA
Rpin-chip
RthCH
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
IISOL < 1 mA; 50/60 Hz
with heatsink compound
0.0 Equivalent Circuits for Simulation
I
V0
Symbol
V0
R0
V0
R0
R0
Definitions
IGBT
Diode
R1
R2
R3
R4
C1
C2
C3
C4
R1
R2
R3
R4
t1
t2
t3
t4
Conditions
T1 - T6
D1 - D6
n
∑ Zth(t) =
i =1
Ri
1− exp − t
τi
τi = Ri⋅Ci
MWI150-12T8T
TC = 25°C
Ratings
min. typ. max. Unit
4.75 5.0 5.25 kW
3375
K
min.
-40
-40
2.7
10
7.5
Ratings
typ. max. Unit
125 °C
150 °C
125 °C
2500 V~
-
3.3 Nm
mm
mm
2.5
mW
0.02
K/W
300
g
Ratings
TVJ = 125°C
TVJ = 125°C
min.
typ. max. Unit
1.0
V
6.7
mW
1.15
V
4.7
mW
IGBT
0.0267
0.0309
0.061
0.0614
0.0025
0.076
0.036
0.076
Diode
0.054
0.05
0.096
0.08
0.0025
0.076
0.036
0.076
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
TC = 25°C unless otherwise stated
20081209b
3-7
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