MXP4005 데이터 시트보기 (PDF) - Microsemi Corporation
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MXP4005 Datasheet PDF : 2 Pages
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OPTO-ELECTRONIC PRODUCTS
Obsolete Product – not recommended for new design
MXP4005 – 12.7 Gbps
InGaAs/InP PIN Photo Diode
PRODUCTION DATA SHEET
CHARACTERISTICS
Test conditions (unless otherwise noted): TA = 25oC, VR = 5 Volts
Parameter
` MAXIMUM RATINGS
Operating Junction Temperature Range
Storage Temperature Range
Maximum Soldering Temperature
` ELECTRICAL CHARACTERISTICS
Active Area Diameter
Responsivity (1)
Linearity (2)
Dark Current
Breakdown Voltage
Capacitance
Bandwidth
Symbol
Test Conditions
TJ
TSTG
10 seconds maximum at temperature
R
VR = 5V, λ= 1550nm
VR = 5V, λ=1310nm
L
VR = 5V @10mW input power
ID
BVR
C
VR = 5V
IR = 10μA
VR = 5V
BW
VR = 5V, λ= 1550nm @3dB
MXP4003
Units
Min Typ Max
-20
+85 oC
-55
+125 oC
+260 oC
40
μm
0.95 1.0
A/W
0.80 0.86
5
%
1.0 nA
20
Volts
0.22 pF
10
GHz
Note:
1. Antireflective coating is ¼ wavelength at 1430nm covering 1310 and 1550nm applications
2. Maximum distortion from nominal @ 10mW input power
PRECAUTIONS FOR USE
ESD protection is important. Standard ESD protection procedures should be employed whenever handling InGaAs PIN photo diode.
Copyright © 2001
Rev. 1.1
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
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