DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

UMT(275)650(2008) 데이터 시트보기 (PDF) - Clare Inc => IXYS

부품명
상세내역
제조사
UMT(275)650
(Rev.:2008)
Clare
Clare Inc => IXYS Clare
UMT(275)650 Datasheet PDF : 5 Pages
1 2 3 4 5
PMT/UMT(275) Series
Specifications (@250C)
Parameter
Conditions
Device Specifications
DC Breakdown
100V/s
Impulse Breakdown
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
VBD
Vbd
IR
C
-
PMT(275)350
Min
Nom
Max
315
350
385
-
-
750
-
1010
-
-
-
3.5
500
-
-
PMT(275)400
Min
Nom
Max
360
400
440
-
-
750
-
1010
-
-
-
3.5
500
-
-
Units
V
V
pF
surges
Specifications (@250C)
Parameter
Conditions
Device Specifications
DC Breakdown
Impulse Breakdown
100V/s
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
VBD
Vbd
IR
C
-
PMT(275)450
Min
Nom
Max
405
450
495
-
-
750
-
1010
-
-
-
3.5
500
-
-
PMT(275)500
Min
Nom
Max
450
500
550
-
-
750
-
1010
-
-
-
3.5
500
-
-
Units
V
V
pF
surges
Specifications (@250C)
Parameter
Conditions
Device Specifications
DC Breakdown
100V/s
Impulse Breakdown
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
VBD
Vbd
IR
C
-
UMT(275)550
Min
Nom
Max
495
550
605
-
-
760
-
1010
-
-
-
3.5
500
-
-
UMT(275)600
Min
Nom
Max
540
600
660
-
-
825
-
1010
-
-
-
3.5
500
-
-
Units
V
V
pF
surges
Specifications (@250C)
Parameter
Conditions
Device Specifications
DC Breakdown
100V/s
Impulse Breakdown
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
VBD
V bd
IR
C
-
UMT(275)650
Min
Nom
Max
585
650
715
-
-
895
-
1010
-
-
-
3.5
500
-
-
UMT(275)750
Min
Nom
Max
675
750
825
-
-
1030
-
1010
-
-
-
3.5
500
-
-
Units
V
V
pF
surges
www.highenergydevices.com
2 of 5

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]