Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
부품명
상세내역
UMT(275)650(2008) 데이터 시트보기 (PDF) - Clare Inc => IXYS
부품명
상세내역
제조사
UMT(275)650
(Rev.:2008)
HIGH-SPEED, HIGH-CURRENT SURGE PROTECTORS
Clare Inc => IXYS
UMT(275)650 Datasheet PDF : 5 Pages
1
2
3
4
5
PMT/UMT(275) Series
Specifications (@25
0
C)
Parameter
Conditions
Device Specifications
DC Breakdown
100V/s
Impulse Breakdown
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
V
BD
V
bd
IR
C
-
PMT(275)350
Min
Nom
Max
315
350
385
-
-
750
-
10
10
-
-
-
3.5
500
-
-
PMT(275)400
Min
Nom
Max
360
400
440
-
-
750
-
10
10
-
-
-
3.5
500
-
-
Units
V
V
Ω
pF
surges
Specifications (@25
0
C)
Parameter
Conditions
Device Specifications
DC Breakdown
Impulse Breakdown
100V/s
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
V
BD
V
bd
IR
C
-
PMT(275)450
Min
Nom
Max
405
450
495
-
-
750
-
10
10
-
-
-
3.5
500
-
-
PMT(275)500
Min
Nom
Max
450
500
550
-
-
750
-
10
10
-
-
-
3.5
500
-
-
Units
V
V
Ω
pF
surges
Specifications (@25
0
C)
Parameter
Conditions
Device Specifications
DC Breakdown
100V/s
Impulse Breakdown
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
V
BD
V
bd
IR
C
-
UMT(275)550
Min
Nom
Max
495
550
605
-
-
760
-
10
10
-
-
-
3.5
500
-
-
UMT(275)600
Min
Nom
Max
540
600
660
-
-
825
-
10
10
-
-
-
3.5
500
-
-
Units
V
V
Ω
pF
surges
Specifications (@25
0
C)
Parameter
Conditions
Device Specifications
DC Breakdown
100V/s
Impulse Breakdown
5kV/µs
Insulation Resistance
100V
Capacitance
1MHz
Life Ratings
Surge Life
1kA (PW=20 µs)
Symbol
V
BD
V
bd
IR
C
-
UMT(275)650
Min
Nom
Max
585
650
715
-
-
895
-
10
10
-
-
-
3.5
500
-
-
UMT(275)750
Min
Nom
Max
675
750
825
-
-
1030
-
10
10
-
-
-
3.5
500
-
-
Units
V
V
Ω
pF
surges
www.highenergydevices.com
2 of 5
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]