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NB100LVEP221FAG 데이터 시트보기 (PDF) - ON Semiconductor

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NB100LVEP221FAG Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
NB100LVEP221
Table 3. ATTRIBUTES
Characteristics
Value
Internal Input Pulldown Resistor
75 kW
Internal Input Pullup Resistor
37.5 kW
ESD Protection
Human Body Model
Machine Model
Charged Device Model
> 2 kV
> 200 V
> 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Pb Pkg
PbFree Pkg
LQFP52
Level 2
Level 3
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
Transistor Count
533 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, refer to Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VCC
PECL Mode Power Supply
VEE
NECL Mode Power Supply
VI
PECL Mode Input Voltage
NECL Mode Input Voltage
Iout
Output Current
VEE = 0 V
VCC = 0 V
VEE = 0 V
VCC = 0 V
Continuous
Surge
VI VCC
VI VEE
6
V
6
V
6
V
6
V
50
mA
100
mA
IBB
VBB Sink/Source
TA
Operating Temperature Range
Tstg
Storage Temperature Range
qJA
Thermal Resistance (JunctiontoAmbient)
0 lfpm
(See Application Information)
500 lfpm
52 LQFP
52 LQFP
± 0.5
40 to +85
65 to +150
35.6
30
mA
°C
°C
°C/W
°C/W
qJC
Thermal Resistance (JunctiontoCase)
(See Application Information)
0 lfpm
500 lfpm
Tsol
Wave Solder
Pb
PbFree
52 LQFP
52 LQFP
3.2
°C/W
6.4
°C/W
265
°C
265
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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