NCP3012 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
NCP3012 Datasheet PDF : 26 Pages
| |||
NCP3012
ELECTRICAL CHARACTERISTICS (−40°C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted)
Characteristic
Conditions
Min
Typ
Max
Unit
ERROR AMPLIFIER (GM)
Transconductance
0.9
1.33
1.9
mS
Open Loop dc Gain
(Notes 4 and 6)
−
70
−
dB
Output Source Current
Output Sink Current
45
70
100
mA
45
70
100
mA
FB Input Bias Current
−
0.5
500
nA
Feedback Voltage
TJ = 25 C
0.792
0.8
0.808
V
COMP High Voltage
COMP Low Voltage
OUTPUT VOLTAGE FAULTS
−40°C < TJ < +125°C,
4.7 V < VIN < 28 V
VFB = 0.75 V
VFB = 0.85 V
0.788
0.8
0.812
V
4.0
4.4
5.0
V
−
60
−
mV
Feedback OOV Threshold
0.8
1.0
1.1
V
Feedback OUV Threshold
0.55
0.59
0.65
V
OVER CURRENT
ISET Source Current
7.0
14
18
mA
Current Limit Set Voltage (Note 5)
GATE DRIVERS AND BOOST CLAMP
HSDRV Pullup Resistance
HSDRV Pulldown Resistance
LSDRV Pullup Resistance
LSDRV Pulldown Resistance
HSDRV falling to LSDRV Rising
Delay
RSET = 22.2 kW
VCC = 8 V and VBST = 7.5 V
VSW = GND, 100 mA out of HSDR pin
VCC = 8 V and VBST = 7.5 V
VSW = GND, 100 mA into HSDR pin
VCC = 8 V and VBST = 7.5 V
VSW = GND, 100 mA out of LSDR pin
VCC = 8 V and VBST = 7.5 V
VSW = GND, 100 mA into LSDR pin
VCC and VBST = 8 V
140
240
360
mV
4.0
10.5
20
W
2.0
5.0
11.5
W
3.0
8.9
16
W
1.0
2.8
6.0
W
50
85
110
ns
LSDRV Falling to HSDRV Rising
Delay
VCC and VBST = 8 V
60
85
120
ns
Boost Clamp Voltage
THERMAL SHUTDOWN
Thermal Shutdown
VIN = 12 V, VSW = GND, VCOMP = 1.3 V
5.5
7.5
9.6
V
(Notes 4 and 7)
−
150
−
°C
Hysteresis
(Notes 4 and 7)
−
15
−
°C
4. Guaranteed by design.
5. The voltage sensed across the high side MOSFET during conduction.
6. This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal Ro of > 10 MW.
7. This is not a protection feature.
http://onsemi.com
6
Share Link: 