NCP362(2009) 데이터 시트보기 (PDF) - ON Semiconductor

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NCP362
(Rev.:2009)

USB Positive Overvoltage and Overcurrent Protection with TVS for VBUS and Low Capacitance ESD Diodes for Data

ON Semiconductor 

NCP362

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

VRWM

Clamping Voltage @ IPP

Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

Ppk

Peak Power Dissipation

C

Max. Capacitance @VR = 0 and f = 1 MHz

*Additional VC, VRWM and VBR voltage can be available. Please

contact your ON Semiconductor representative for availability.

Vin

Vout

FLAG

UVLO

ton

0.8 Vin

tstart

1.2 V

<OVLO

Vin − RDS(on) x I

Figure 3. Start Up Sequence

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

Vin

Vin − RDSon x I

Vout

OVLO

toff

0.3 V

tstop

FLAG

0.4 V

Figure 4. Shutdown on Over Voltage Detection

EN

1.2 V

tdis

Vout

Vin − RDS(on) x I

0.3 V

FLAG

Figure 5. Disable on EN = 1

EN

Vout

FLAG

1.2 V

OVLO

UVLO

tstart

Figure 6. FLAG Response with EN = 1

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