NCV4299(2009) 데이터 시트보기 (PDF) - ON Semiconductor
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NCV4299 Datasheet PDF : 23 Pages
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NCV4299
ELECTRICAL CHARACTERISTICS (continued) (−40°C < TJ < 150°C; VI = 13.5 V unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
Reset (RO)
Delay Output Low Voltage
5.0 V Version
3.3 V Version
Delay Charge Current
5.0 V Version
3.3 V Version
Power On Reset Delay Time
Reset Reaction Time
Reset Adjust Switching Threshold
5.0 V Version
3.3 V Version
VD,sat
Q < 4.5 V, Internal RRO
Q < 2.96 V, Internal RRO
ID
Q < 4.5 V, Internal RRO, VD = 1.0 V
Q < 2.96 V, Internal RRO, VD = 1.0 V
td
CD = 100 nF
tRR
CD = 100 nF
VRADJ,TH
Q > 3.5 V
Q > 2.3 V
V
−
−
0.1
− 0.017 0.1
mA
4.0 7.1 12
−
−
−
17
28
35
ms
0.5 2.2 4.0 ms
V
1.26 1.36 1.44
−
−
−
Input Voltage Sense (SI and SO)
Sense Input Threshold High
Sense Input Threshold Low
Sense Input Hysteresis
VSI,High
VSI,Low
−
−
−
(Sense Threshold High) −
(Sense Threshold Low)
1.34 1.45 1.54 V
1.26 1.36 1.44 V
50
90 130 mV
Sense Input Current
Sense Output Resistance
Sense Output Low Voltage
Allowable External Sense Out
Pullup Resistor
ISI
RSO
VSO
RSOext
−
−
VSI < 1.20 V, VI > 4.2 V, ISO = 0 mA
−
−1.0 0.1 1.0 mA
10
20
40
kW
−
0.1 0.4
V
5.6
−
−
kW
SI High to SO High Reaction Time
tPSOLH
−
SI Low to SO Low Reaction Time
tPSOHL
−
−
4.4 8.0 ms
−
3.8 5.0 ms
II
IQ
VI
I
Q
VQ
VINH
IINH
(14−Pin Part Only)
INH
D
CD
100 nF
ID
RO
VRADJ
VSI
IRADJ
ISI
RADJ
SO
SI
GND
VRO
VSO
Iq
Figure 3. Measurement Circuit
http://onsemi.com
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