NDB4060L 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

NDB4060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TC = 25°C unless otherwise noted)

Symbol Parameter

Conditions

DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W DSS

Single Pulse Drain-Source Avalanche

Energy

VDD = 25 V, ID = 15 A

IAR

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA

VDS = 60 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

Gate - Body Leakage, Reverse

ON CHARACTERISTICS (Note 1)

VGS(th)

Gate Threshold Voltage

VGS = 16 V, VDS = 0 V

VGS = -16 V, VDS= 0 V

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source On-Resistance

VGS = 5 V, ID = 7.5 A

ID(on)

On-State Drain Current

gFS

Forward Transconductance

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 1)

tD(on)

Turn - On Delay Time

tr

Turn - On Rise Time

tD(off)

Turn - Off Delay Time

tf

Turn - Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VGS = 10 V, ID = 15 A

VGS = 5 V, VDS = 10 V

VDS = 10 V, ID = 7.5 A

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

VDD = 30 V, ID = 15 A,

VGS = 5 V, RGEN = 51 Ω,

RGS = 51 Ω

VDS = 48 V,

ID = 15 A, VGS = 5 V

Min Typ Max Units

40

mJ

15

A

60

TJ =125°C

V

250 µA

1

mA

100 nA

-100 nA

1

1.5

2

V

TJ =125°C 0.65 1.1

1.5

0.085 0.1

Ω

TJ =125°C

0.14 0.16

0.07 0.08

15

A

3

8

S

510 600 pF

170 200 pF

50 100 pF

9

20

nS

151 250 nS

35 100 nS

61 150 nS

11

17

nC

2

nC

6.1

nC

NDP4060L Rev. B / NDB4060L Rev. C

Share Link: