NDT453N 데이터 시트보기 (PDF) - Fairchild Semiconductor

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NDT453N

N-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 8.0 A (Note 2)

trr

Reverse Recovery Time

VGS = 0 V, IS = 2 A, dIF/dt = 100A/µs

2.3 A

0.8 1.3 V

100 ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

( ) = = = ( ) × PD t

TJ−TA

RθJ A(t)

TJ−TA

RθJ C+RθCA(t)

I

2

D

t

RDS(ON ) TJ

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.

b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.

1a

1b

1c

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT453N Rev. D1

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