NDT454 데이터 시트보기 (PDF) - Fairchild Semiconductor
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NDT454 Datasheet PDF : 6 Pages
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
VDS = -15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -5.9 A
VGS = -6 V, ID = -5.2 A
VGS = -4.5 V, ID = -4.6 A
VGS = -10 V, VDS = -5 V
VGS = -4.5, VDS = -5V
VDS = 15 V, ID = 5.9 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDD = -15 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 Ω
VDS = -15 V,
ID = -5.9 A, VGS = -10 V
Min Typ Max Units
-30
TJ = 70°C
V
-1
µA
-5
µA
100 nA
-100 nA
-1 -2.7
V
0.038 0.05
Ω
0.046 0.07
0.064 0.09
-15
A
-5
10
S
950
pF
610
pF
220
pF
10
30
ns
18
60
ns
80
120
ns
45
100
ns
29
40
nC
3
11
NDT454P Rev. D2
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