NDT456P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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NDT456P Datasheet PDF : 7 Pages
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Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = -24 V, VGS = 0 V
IGSSF
Gate - Body Leakage, Forward
IGSSR
Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = - 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -7.5 A
ID(on)
On-State Drain Current
Gfs
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VGS = - 4.5 V, ID = -6 A
VGS = -10 V , VDS = - 5 V
VGS = -4.5 V, VDS = - 5 V
VGS = -10 V, ID = -7.5 A
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
VDD = -15 V, ID = -7 A,
VGEN = -10 V, RGEN = 12 Ω
VDS = -10 V,
ID = -7.5 A, VGS = -10 V
Min Typ Max Units
-30
TJ = 55°C
V
-1
µA
-10
µA
100 nA
-100 nA
-1 -1.5 -3
V
TJ = 125°C -0.5 -1.1 -2.6
0.026 0.03
Ω
TJ = 125°C
0.035 0.054
0.041 0.045
-20
A
-10
13
S
1440
pF
905
pF
355
pF
10
20
ns
65
120
ns
70
130
ns
70
130
ns
47
67
nC
5
nC
12
nC
NDT456P Rev. F
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