NDT456P 데이터 시트보기 (PDF) - Fairchild Semiconductor

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NDT456P

P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

-2.5

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = - 2.5 A (Note 2)

- 0.85 -1.2

V

trr

Reverse Recovery Time

VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/µs

140

ns

Notes:

P (t) = = = I (t) × R 1. D

TJ −TA

TJ −TA

2

RθJA(t) RθJC+RθCA(t)

D

DS(ON)@TJ RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the

solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,

typical RθJA is found to be:

a. 42oC when mounted on a 1 in2 pad of 2oz copper.

b. 95oC when mounted on a 0.066in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper.

1a

1b

1c

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT456P Rev. F

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