NDT456 데이터 시트보기 (PDF) - Fairchild Semiconductor
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NDT456 Datasheet PDF : 7 Pages
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Typical Electrical Characteristics
1 .1
1 .0 8
ID =- 250µA
1 .0 6
1 .0 4
1 .0 2
1
0 .9 8
0 .9 6
0 .9 4
-5 0
-2 5
0
25
50
75
100 125 150
T , JU N CTION T EM PERA T U RE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature.
20
V GS= 0V
5
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
4000
3000
2000
1000
Ciss
Coss
500
400
300
200
0.1
f = 1 MHz
VGS = 0V
Crss
0.2
0.5
1
2
5
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
20 30
Figure 9. Capacitance Characteristics.
10
ID = -7.5A
8
6
VDS =- 5V
-10V
-20V
4
2
0
0
10
20
30
40
50
60
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VIN
VGS
R GEN
G
-VDD
RL
D
V OUT
DUT
S
Figure 11. Switching Test Circuit.
t d(on)
ton
tr
90%
td(off)
toff
tf
90%
VOUT
VIN
10%
10%
50%
10%
90%
50%
PULSE W IDTH
INVERTED
Figure 12. Switching Waveforms.
NDT456P Rev. F
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