NE429M01-T1 데이터 시트보기 (PDF) - NEC => Renesas Technology
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NE429M01-T1 Datasheet PDF : 12 Pages
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NE429M01
PIN CONNECTIONS
(Top View)
3
4
2
5
1
6
(Bottom View)
4
3
5
2
6
1
Pin No.
1
2
3
4
5
6
Pin name
Gate
Source
Source
Drain
Source
Source
RECOMMENDED OPERATING CONDITION (TA = +25 °C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
1
5
−
TYP.
2
10
−
MAX.
3
20
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −3 V
−
0.5
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
20
60
90
mA
Gate to Source Cutoff Voltage
VGS(off) VDS = 2 V, ID = 100 µA
−0.2
−0.7
−2.0
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
45
60
−
mS
Noise Figure
NF f = 12 GHz
VDS = 2 V
−
0.9
1.2
dB
f = 4 GHz
ID = 10 mA
−
0.4
−
Associated Gain
Ga
f = 12 GHz
9.0
10
−
dB
f = 4 GHz
−
15.0
−
2
Data Sheet P12254EJ3V0DS00
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