ASI10752 데이터 시트보기 (PDF) - Advanced Semiconductor

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ASI10752

NPN SILICON LOW NOISE RF TRANSISTOR

Advanced Semiconductor 

NE64535

NPN SILICON LOW NOISE RF TRANSISTOR

DESCRIPTION:

The ASI NE64535 is a Common

Emitter Device Designed for Low Noise

Class A Amplifier Applications up to 4.0

GHz.

FEATURES INCLUDE:

• NF = 1.6 dB Typical @ 2 GHz

•S21E2 = 11 dB Typical @ 2 GHz

• Hermetic Ceramic Package

PACKAGE STYLE .085 4L SQ

MAXIMUM RATINGS:

IC

60 mA

VCBO

25 V

VCEO

12 V

VEBO

PDISS

1.5 V

300 mW @ TA ≤ 75 OC

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θJC

85 °C/W

1 = Collector

2 & 4 = Emitter

3 = Base

ORDER CODE: ASI10752

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

ICBO

VCB = 8 V

IEBO

VEB = 1.0 V

hFE

VCE = 8.0 V

IC = 7.0 mA

CCB

VCB = 10 V

ft

S21E2

NF

GA

VCE = 10 V

VCE = 8 V

VCE = 8 V

IC = 20 mA

IC = 20 mA

IC = 10 mA

f = 1.0 GHz

f = 2.0 GHz

f = 2.0 GHz

MINIMUM TYPICAL MAXIMUM

100

1.0

50

250

UNITS

nA

µA

---

0.6

pF

8.0

8.5

GHz

10

11

dB

1.6

2.5

10

11

dB

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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