NE85632 데이터 시트보기 (PDF) - California Eastern Laboratories.
부품명
상세내역
제조사
NE85632 Datasheet PDF : 26 Pages
| |||
NE856 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
NE85600
00 (CHIP)
NE85618
2SC5011
18
NE85619
2SC5006
19
NE85630
2SC4226
30
NE85632
2SC3355
32
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
GHz
7.0
6.5
6.5
VCE = 3 V, IC = 7 mA
GHz
3.0 4.5
4.5
NF
Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
dB
1.1
1.4
1.4
1.3
1.4
VCE = 10 V, IC = 7 mA, f = 2 GHz
dB
2.1
2.1
2.2
2.2
GA
|S21E|2
hFE
Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
f = 2 GHz
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
dB
13
12.5
12
10
dB
10
7
6.5
6
dB
11 13
12
12
9.5
dB 7 9
7
6
50 120 300 50 120 300
50 120 300
80 120 160 40 110 250
ICBO Collector Cutoff Current
at VCB = 15 V, IE = 0 mA
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
μA
1.0
1.0
1.0
1.0
1.0
μA
1.0
1.0
1.0
1.0
1.0
Cre
Feedback Capacitance3 at
VCB = 3 V, IE = 0 mA, f = 1 MHz
pF
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.5 1.0
0.5 0.9
0.7 1.5
0.7 1.5
0.65 1.0
PT
Total Power Dissipation
mW
700
150
100
150
600
RTH (J-A) Thermal Resistance (J-A)
°C/W
833
1000
833
210
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS PARAMETERS AND CONDITIONS UNITS
fT
Gain Bandwidth Product at
VCE = 10 V, IC = 20 mA
NF
Noise Figure at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
GA
Associated Gain at
VCE = 10 V, IC = 7 mA, f = 1 GHz
f = 2 GHz
GHz
dB
dB
dB
dB
|S21E|2 Insertion Power Gain at
VCE = 10 V, IC = 20 mA, f = 1 GHz
dB
f = 2 GHz
dB
hFE
Forward Current Gain2 at
VCE = 10 V, IC = 20 mA
ICBO
Collector Cutoff Current
at VCB = 15 V, IE = 0 mA
μA
IEBO
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
μA
Cre
Feedback Capacitance3 at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
PT
Total Power Dissipation
mW
RTH (J-A) Thermal Resistance (J to A)
°C/W
NE85633
2SC3356
33
MIN TYP MAX
NE85634
2SC3357
34
MIN TYP MAX
NE85635
2SC3603
35
MIN TYP MAX
NE85639/39R
2SC4093
39
MIN TYP MAX
7.0
6.5
1.4 2.0
1.4
9
7.0
2.1 3.4
10
9.0
1.5 2.1
13.5
8.5
11.5
9.5
13
79
7
50 120 300 50 120 300 50 120 300 50 120 300
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.55 1.0
200
625
0.65 1.0
20004
62.54
0.5 1.0
580
590
0.5 0.9
200
500
Notes:
1. Electronic Industrial Association of Japan.
2. Pulse width ≤ 350 μs, duty cycle ≤ 2% pulsed.
3. Cre measurement employs a three terminal capacitance bridge incorporating a
guard circuit. The emitter terminal shall be connected to the guard terminal.
4. With 2.5 cm2 x 0.7 mm ceramic substrate (infinite heatsink).
Share Link: 