NLAS2066US 데이터 시트보기 (PDF) - ON Semiconductor

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NLAS2066US

Ultra-Small Dual Single Pole, Single Throw Analog Switch with Over Voltage Tolerance

ON Semiconductor 

NLAS2066

DEVICE JUNCTION TEMPERATURE VS. TIME TO

0.1% BOND FAILURES

Junction

Temperature 5C

Time, Hours

Time, Years

80

1,032,200

117.8

90

419,300

47.9

100

178,700

20.4

110

79,600

9.4

120

37,000

4.2

130

17,800

2.0

140

8,900

1.0

FAILURE RATE OF PLASTIC = CERAMIC

UNTIL INTERMETALLICS OCCUR

1

1

10

100

1000

TIME, YEARS

Figure 1. Failure Rate vs. Time Junction Temperature

DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)

Guaranteed Max Limit

Symbol

VIH

Parameter

Minimum High−

Level Input Voltage,

Enable Inputs

Condition

VIL

Maximum Low−

Level Input Voltage,

Enable Inputs

IIN

Maximum Input

VIN = 5.5 V or GND

Leakage Current,

Enable Inputs

VCC

2.3 $ 10%

2.7 $ 10%

3.0 $ 10%

5.0 $ 10%

2.3 $ 10%

2.7 $ 10%

3.0 $ 10%

5.0 $ 10%

0 V to 5.5 V

255C

VCC x 0.55

VCC x 0.55

VCC x 0.55

VCC x 0.55

VCC x 0.30

VCC x 0.30

VCC x 0.30

VCC x 0.30

+0.1

−40 to 855C

VCC x 0.55

VCC x 0.55

VCC x 0.55

VCC x 0.55

VCC x 0.30

VCC x 0.30

VCC x 0.30

VCC x 0.30

+1.0

−55 to <1255C

VCC x 0.55

VCC x 0.55

VCC x 0.55

VCC x 0.55

VCC x 0.30

VCC x 0.30

VCC x 0.30

VCC x 0.30

+1.0

Unit

V

V

mA

ICC

Maximum Quies-

Enable and VIS = VCC

5.5

1.0

1.0

2.0

mA

cent Supply Current or GND

(per package)

http://onsemi.com

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