NLAS2066US 데이터 시트보기 (PDF) - ON Semiconductor
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NLAS2066US
ON Semiconductor
NLAS2066US Datasheet PDF : 10 Pages
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NLAS2066
ADDITIONAL APPLICATIONS CHARACTERISTICS (Voltage Reference to GND Unless Noted)
Symbol
Parameter
Condition
VCC
(V)
BW
Maximum On−Channel −3.0 dB Bandwidth
or Minimum Frequency Response
VIS = 0 dBm
2.3
(Figure 8 and 9)
2.7
3.0
4.5
VONL
Maximum Feed−Through On Loss
VIS = 0 dBm @ 10 kHz
2.3
(Figure 8 and 9)
2.7
3.0
4.5
VISO
Off−Channel Isolation
f = 100 kHz
2.3
VIS = 1.0 V RMS
2.7
(Figure 10 and 11)
3.0
4.5
Q
Charge Injection
Enable Input to Common I/O
VIS = VCC to GND, FIS = 20 kHz
3.0
(Figure 12)
5.5
THD
Total Harmonic Distortion
TDH + Noise
FIS = 10 Hz to 100 kHz,
RL = Rgen = 600 W, CL = 50 pF
3.0
5.5
(Figure 13)
Typical 255C
102
175
180
186
−2.2
−0.9
−0.8
−0.4
−73
−74
−74
−75
4.8
7.4
0.19
0.06
Unit
MHz
dB
dB
pC
%
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