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ISP814X3 데이터 시트보기 (PDF) - Isocom

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ISP814X3 Datasheet PDF : 3 Pages
1 2 3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
70V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T = 25°C Unless otherwise noted )
A
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V )
F
1.2 1.4 V
I = ± 20mA
F
Output
Collector-emitter Breakdown (BVCEO) 70
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP814-3, ISP824-3, ISP844-3
20
40
80
ISP814-2, ISP824-2, ISP844-2
40
80
ISP814-1, ISP824-1, ISP844-1
80
Collector-Emitter Saturation Voltage-3
-2
-1
Input to Output Isolation Voltage V 5300
ISO
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
4
Output Fall Time tf
3
V
V
100 nA
%
%
%
%
%
%
0.4 V
0.4 V
0.4 V
V
RMS
VPK
18 µs
18 µs
IC = 1mA
I
E
=
100µA
VCE = 20V
± 0.25mAIF ,0.4V VCE
± 0.5mA IF , 0.4V VCE
± 1.0mA I , 0.4V V
F
CE.
± 0.5mA IF , 0.4V VCE
± 1.0mA I , 0.4V V
F
CE
± 1.0mA IF , 0.4V VCE
± 0.25mAI ,0.05mAI
F
C
± 0.5mA IF , 0.2mA IC
± 1.0mA IF , 0.8mA IC
See note 1
See note 1
VIO = 500V (note 1)
V = 2V ,
CE
IC=0.05mA,RL=100
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92449m-AAS/A4

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