NTD4806N-1G 데이터 시트보기 (PDF) - ON Semiconductor

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NTD4806N-1G

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

ON Semiconductor 

NTD4806N

TYPICAL PERFORMANCE CURVES

100

125°C

100°C

25°C

10

1

1

10

100

1000

PULSE WIDTH (ms)

Figure 13. Avalanche Characteristics

1.0

D = 0.5

0.2

0.1

0.1 0.05

0.02

0.01

SINGLE PULSE

0.01

1.0E--05

1.0E--04

P(pk)

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

t1

READ TIME AT t1

t2

TJ(pk) -- TC = P(pk) RθJC(t)

DUTY CYCLE, D = t1/t2

1.0E--03

1.0E--02

t, TIME (ms)

Figure 14. Thermal Response

1.0E--01

1.0E+00

1.0E+01

ORDERING INFORMATION

Order Number

Package

Shipping†

NTD4806NT4G

DPAK

(Pb--Free)

2500 Tape & Reel

NTD4806N--1G

IPAK

(Pb--Free)

75 Units/Rail

NTD4806N--35G

IPAK Trimmed Lead

(3.5  0.15 mm)

(Pb--Free)

75 Units/Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

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