NTE359
Silicon NPN Transistor
RF & Microwave Transistor
Description:
RF Power Transistor 20W − 175 MHz
Features:
Specified 28 Volt, 175MHz Characteristics
Output Power = 20 Watts
Minimum Gain = 8.2dB
Efficiency = 60%
Characterized from 125 to 175MHz
Includes Series Equivalent Impedances
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter−Base Voltage, Veb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Device Dissipation @ 25°C, Pd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to °C +200
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to °C +200
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Off Characteristics
Collector−Emitter Breakdown Voltage
Collector−Emitter Sustaining Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
V(Br)CEO IC = 200mA, IB = 0, Note 1
V(Br)CES IC = 200mA, VBE = 0
V(Br)ebo IE = 10mA, IC = 0
ICBO VCB = 30 V, IE = 0
DC Current Gain
Hfe IC = 200mA, VCE = 5.0V
Note 1. Pulsed through 25mH inductor
Min Typ Max Unit
− 35 − V
− 65 − V
−4 −V
− 1 − mA
−5 − −