NTE359 데이터 시트보기 (PDF) - NTE Electronics

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NTE359

Silicon NPN Transistor RF & Microwave Transistor

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Output Capacitance

Common−Emitter Amplifier Power Gain

Collector Efficiency

Cob VCB = 30V, IE = 0, f = .1 to 1MHz

− 22 35 pF

Gpe POUT = 20W, VCE = 28V, f = 175MHz 8.2 − − dB

η

− 60 − −

1.040 (26.4) Max

.520

(13.2)

C

.230

(5.84)

E

E

.100 (2.54)

B

.385

(9.8)

Dia

.005 (0.15)

8−32−NC−3A

Wrench Flat

.168 (4.27)

.750

(19.05)

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