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NTE387 데이터 시트보기 (PDF) - NTE Electronics

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NTE387 Datasheet PDF : 2 Pages
1 2
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 4V, IC = 1A
VCE = 4V, IC = 20A
VCE = 4V, IC = 50A
IC = 20A, IB = 2A
IC = 50A, IB = 10A
IC = 20A, IB = 2A
IC = 50A, IB = 10A
VCE = 4V, IC = 20A
50 – –
30 – 120
10 – –
––1V
––3V
– – 1.8 V
– – 3.5 V
– 1.8 V
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Switching Characteristics
fT
VCE = 10V, IC = 1A, ftest = 10MHz, Note 3
Cob VCB = 10V, IE = 0, ftest = 0.1MHz
30 – – MHz
– – 600 pF
Rise Time
Storage Time
Fall Time
tr
VCC = 80V, IC = 20A, IB1 = 2A, VBE(off) = 5V –
– 0.35 µs
ts
VCC = 80V, IC = 20A, IB1 = IB2 = 2A
– – 0.80 µs
tf
– – 0.25 µs
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. fT = (hfe)  test
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
.215 (5.45)
.430
(10.92)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case

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