NTE5454 데이터 시트보기 (PDF) - NTE Electronics

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NTE5454

Silicon Controlled Rectifier (SCR) 4 Amp Sensitive Gate

NTE Electronics 

Electrical Characteristics:

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Peak Off–State Current

Maximum On–State Voltage

DC Holding Current

DC Gate–Trigger Current

DC Gate–Trigger Voltage

Total Gate Controlled

Turn–On Time

I2t for Fusing Reference

IRRM VRRM = Max, VDRXM = Max,

–

IDRXM TC = +100°C, RG–K = 1kΩ

–

VTM TC = +25°C, IT = 4A (Peak)

–

IHOLD TC = +25°C

–

IGT VD = 6VDC, RL = 100Ω, TC = +25°C –

VGT VD = 6VDC, RL = 100Ω, TC = +25°C –

tgt TC = +25°C

–

I2t > 1.5msoc

–

– 100 µA

– 100 µA

– 2.2 V

– 3 mA

50 200 µA

– 0.8 V

1.2 – µs

– 0.5 A2sec

Critical rate of Applied

Forward Voltage

dv/dt RG–K = 1kΩ, TC = +100°C

(critical)

– 8 – V/µs

.380 (9.56)

A

.500

(12.7)

1.200

(30.48)

Ref

.300

(7.62)

.180 (4.57)

.132 (3.35) Dia

.325

(9.52)

.070 (1.78) x 45°

Chamf

.050 (1.27)

.380

(9.65)

Min

K AG

.100 (2.54)

.100 (2.54)

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