NTE555 데이터 시트보기 (PDF) - NTE Electronics

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NTE555

Silicon Pin Diode UHF/VHF Detector

NTE Electronics 

NTE555

Silicon Pin Diode

UHF/VHF Detector

Description:

The NTE555 is designed primarily for high–efficiency UHF and VHF detector applications. It is readily

adaptable to may other fast switching RF and digital applications.

Features:

D Schottky Barrier Construction Provides Stable Characteristics by Eliminating

the “Cat–Whisker” or “S–Bend” Contact

D Very Low Capacitance: 1.0pF

D Extremely Low Minority Carrier Lifetime: 100ps (Max)

D High Reverse Voltage: VR = 50V

D Low Reverse Leakage Current: IR = 200nA (Max)

Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated)

Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V

Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Electrical Characteristics: (TA = +25°C, unless otherwise indicated)

Parameter

Symbol

Test Conditions

Reverse Breakdown Voltage

Diode Capacitance

Minority Carrier Lifetime

Reverse Leakage Current

Forward Voltage

Case Capactiance

V(BR)R

CT

r

IR

VF

CC

IR = 10µA

VR = 20V, f = 1MHz

IF = 5mA, Krakauer Method

VR = 25V

IF = 10mA

f = 1MHz

Min Typ Max Unit

50 – – V

– 0.48 1.0 pF

– 15 100 ps

– 7 200 nA

– 1.0 1.2 V

– 0.1 – pF

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