NTE725 데이터 시트보기 (PDF) - NTE Electronics
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NTE725 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TA = +25°C, V+ = ±15V, RL = 5kΩ to Pin7 unless otherwise specified)
Parameter
Test Conditions
Min Typ Max Unit
Input Offset Voltage
Input Offset Current
RS = 200Ω
V+ = ±4V, RL = 10kΩ to Pin7, RS = 200Ω
– 1.0 6.0 mV
– 1.0 6.0 mV
– 50 1000 nA
Input Bias Current
V+ = ±4V, RL = 10kΩ to Pin7
– 50 1000 nA
– 0.3 2.0 µA
Input Resistance
V+ = ±4V, RL = 10kΩ to Pin7
– 300 – µA
37 150 – kΩ
Large Signal Voltage Gain
VOUT = ±10V
6.5k 20k – V/V
V+ = ±4V, RL = 10kΩ to Pin7, VOUT = ±2V 2.5k 15k – V/V
Positive Output Voltage Swing
+12 +13 –
V
V+ = ±4V, RL = 10kΩ to Pin7
Negative Output Voltage Swing
+2.5 +2.8 –
V
–14 –15 –
V
Output Resistance
V+ = ±4V, RL = 10kΩ to Pin7
f = 1kHz
–3.6 –4.0 –
V
– 5.0 – kΩ
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Input Voltage Range
RS = 200Ω, VIN = +11.5v to –13.5V
RS = 200Ω
70 90
– 50
–10 –
– dB
– µV/V
+11 V
Internal Power Dissipation
Supply Current
Broadband Noise Figure
Turn–On Delay
Turn–Off Delay
Slew Rate (Unity Gain)
Channel Separation
V+ = ±4V, RL = 10kΩ to Pin7, VOUT = 0
VOUT = 0
V+ = ±4V, RL = 10kΩ to Pin7, VOUT = 0
RS = 10kΩ, BW = 10Hz to 10kHz
Open Loop, VIN = ±20mV
Open Loop, VIN = ±20mV
C1 = 0.02µF, R1 = 33Ω, C2 = 10pF
RS = 1kΩ, f = 10kHz
– 20 – mW
– 9 14 mA
– 2.5 – mA
– 2.0 – dB
– 0.2 – µs
– 0.3 – µs
– 1.0 – V/µs
– 140 – dB
Pin Connection Diagram
Output A 1
Output Lag A 2
Input Lag A 3
Input Lag A 4
Non–Invert Input A 5
Inverting input A 6
(–) VCC 7
14 (+) VCC
13 Output B
12 Output Lag B
11 Input Lag B
10 Input Lag B
9 Non–Invert Input B
8 Inverting Input B
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