NTE917 데이터 시트보기 (PDF) - NTE Electronics

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NTE917

Integrated Circuit Dual, Independent Transistor Array, Differential Amp

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics

Common−Mode Rejection Ratio

for Each Amplifier

AGC Range, One Stage

CMRR

AGC

VCC = 12V, VEE = −6V,

Vx = −3.3V, f = 1kHz

− 100 − dB

− 75 − dB

Voltage Gain, Single Stage

A

Double−Ended Output

− 32 − dB

AGC Range, Two Stage

AGC

− 105 − dB

Voltage Gain, Two Stage

A

Double−Ended Output

− 60 − dB

Low−Frequency, Small−Signal

Equivalent−Circuit Characteristics

(For Single Transistor)

Forward Current−Transfer Ratio

Short−Circuit Input Impedance

Open−Circuit Output Impedance

Open−Circuit Reverse Voltage

Transfer Ratio

hfe

f = 1kHz, VCE = 3V,

hie

IC = 1mA

hoe

hre

− 110 −

− 3.5 −

− 15.6 −

1.8 x 10−4 (Typ)

kΩ

µmho

1/f Noise Figure (For Single Transistor)

Gain−Bandwidth Product

(For Single Transistor)

NF

f = 1kHz, VCE = 3V

fT

VCE = 3V, IC = 3mA

− 3.25 − dB

− 550 − MHz

Admittance Characteristics;

Differential Circuit Configuration:

(For Each Amplifier)

Forward Transfer Admittance

Input Admittance

Output Admittance

Reverse Transfer Admittance

Admittance Characteristics;

Cascode Circuit Configuration:

(For Each Amplifier)

y21

VCB = 3V Each Collector

−20+j0 (Typ) mmho

y11

IC ≈ 1.25mA, f = 1MHz

0.22+j0.1 (Typ) mmho

y22

0.01+j0 (Typ) mmho

y12

−0.003+j0 (Typ) mmho

Forward Transfer Admittance

Input Admittance

Output Admittance

Reverse Transfer Admittance

Noise Figure

y21

VCB = 3V Total Stage

y11

IC ≈ 2.5mA, f = 1MHz

68−j0 (Typ)

0.55+j0 (Typ)

mmho

mmho

y22

0+j0.02 (Typ) mmho

y12

0.004−j0.005 (Typ) µmho

NF

f = 100MHz

−

8

− dB

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