NTR4503N 데이터 시트보기 (PDF) - TY Semiconductor
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NTR4503N Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 24 V
VGS = 0 V, VDS = 24 V, TJ = 125°C
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
TY CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2.0 A
Forward Transconductance
gFS
VDS = 4.5 V, ID = 2.5 A
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
VGS = 0 V, f = 1.0 MHz,
VDS = 24 V
VGS = 10 V, VDS = 15 V,
ID = 2.5 A
VGS = 4.5 V, VDS = 24 V,
ID = 2.5 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 15 V,
ID = 1 A, RG = 6 W
VGS = 10 V, VDD = 24 V,
ID = 2.5 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V, IS = 2.0 A
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0 V, IS = 2.0 A,
dIS/dt = 100 A/ms
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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Product specification
NTR4503N
Typ
Max
Units
36
V
1.0
mA
10
"100
nA
1.75
3.0
V
85
110
mW
105
140
5.3
S
135
pF
52
15
130
250
pF
42
75
13
25
3.6
7.0
nC
0.3
0.6
0.7
1.9
nC
0.3
0.6
0.9
5.8
12
ns
5.8
10
14
25
1.6
5.0
4.8
ns
6.7
13.6
1.8
0.85
1.2
V
9.2
ns
4.0
nC
2 of 2
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