NX8341UB-AZ 데이터 시트보기 (PDF) - California Eastern Laboratories.

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NX8341UB-AZ

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

California Eastern Laboratories. 

NX8341 Series

ELECTRO-OPTICAL CHARACTERISTICS (TC = −5 to +85°C, BOL, unless otherwise specified)

Parameter

Mean Optical Output Power

Peak Emission Wavelength

Side Mode Suppression Ratio

Threshold Current

Differential Efficiency

Operation Voltage

Monitor Current

Monitor Dark Current

Rise Time

Fall Time

Extinction Ratio

Tracking Error*2

Input Impedance

Connector Repeatability

Symbol

Conditions

Pf

λp

CW, Pf = −2 dBm

SMSR CW, Pf = −2 dBm

Ith

CW, TC = 25°C

CW

ηd CW, Pf = −2 dBm, TC = 25°C

CW, Pf = −2 dBm

Vop CW, Pf = −2 dBm

Im

Pf = −2 dBm, VR = 1.5 V

ID

VR = 1.5 V, TC = 25°C

VR = 1.5 V

tr

20-80%

tf

20-80%

Ex 10 GbE, 10 G FC

γ

Zin

CR With master pigtail

MIN. TYP. MAX. Unit

−2

dBm

1 290

1 330

nm

30

dB

8

20

mA

2

40

0.02 0.025 0.04

W/A

0.005

0.05

2

V

*1

90

700

µA

5

nA

50

*1

30

50

ps

*1

40

50

ps

*1

4

5

dB

−1.0

1.0

dB

25

Ω

−1.0

1.0

dB

*1 9.95/10.3/10.5 Gb/s, PRBS 231−1, NRZ, Duty Cycle = 50%

*2 Tracking Error: γ

Pf

(mW)

TC = 25˚C

γ = 10 log Pf

[dB]

Pf @ 25˚C

Pf @ 25˚C

Pf

TC = –5 to +85˚C

0

Im

Im (mA)

Data Sheet PL10525EJ03V0DS

11

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