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OP196GP 데이터 시트보기 (PDF) - Analog Devices

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OP196GP Datasheet PDF : 16 Pages
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OP196/OP296/OP496
ELECTRICAL SPECIFICATIONS (@ VS = +3.0 V, VCM = +1.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ Max
Units
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Long-Term Offset Voltage
Offset Voltage Drift
VOS
IB
IOS
VCM
CMRR
AVO
VOS
VOS/T
OP196G, OP296G, OP496G
0°C TA +125°C
OP296H, OP496H
0°C TA +125°C
0
0 V VCM 3.0 V,
0°C TA +125°C
60
RL = 100 k
80
G Grade, Note 1
H Grade, Note 1
G Grade, Note 2
H Grade, Note 2
35
300
650
800
1.2
± 10 ± 50
±1
±8
+3.0
200
550
1
1.5
2
µV
µV
µV
mV
nA
nA
V
dB
V/mV
µV
mV
µV/°C
µV/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High
VOH
Output Voltage Swing Low
VOL
IL = 100 µA
IL = –100 µA
2.85
70
POWER SUPPLY
Supply Current per Amplifier
ISY
VOUT = 1.5 V, RL =
0°C TA +125°C
40
60
80
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 100 k
0.25
Gain Bandwidth Product
GBP
350
Phase Margin
øm
45
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
0.8
Voltage Noise Density
en
f = 1 kHz
26
Current Noise Density
in
f = 1 kHz
0.19
NOTES
1Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.
2Offset voltage drift is the average of the 0°C to +25°C delta and the +25°C to +125°C delta.
Specifications subject to change without notice.
V
mV
µA
µA
V/µs
kHz
Degrees
µV p-p
nV/Hz
pA/Hz
REV. B
–3–

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