OPB700TXV 데이터 시트보기 (PDF) - Optek Technology

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OPB700TXV

Hi- Reliability Reflec tive Object Sensor

Optek Technology 

Types OPB700TX, OPB700TXV

Electrical Characteristics (TA = 25o C unless otherwise noted)

Symbol

Parameter

Input Diode

Forward Voltage(6)

VF

IR

Reverse Current

Output Phototransistor

V(BR)CEO Collector-Emitter Breakdown Voltage

V(BR)ECO Emitter-Collector Breakdown Voltage

IC(off)

Collector-Emitter Dark Current

Combined

IC(on)

On-State Collector Current

d = 0.20 in. (5.08mm)(2,3,6)

ICX

Crosstalk (No Reflective Surface(3)

VCE(SAT)

Collector-Emitter Saturation Voltage

d = 0.20 in. (5.08mm)(2,3)

tr

Output Rise Time

tf

Output Fall Time

Min

1.10

1.30

0.90

50

7.0

50

25

25

Typ Max Units

Test Conditions

1.60 1.80

1.80 2.00

1.40 1.70

0.1 100

V IF = 50.0 mA

V IF = 50.0 mA, TA = -55o C

V IF = 50.0 mA, TA = 100o C

µA VR = 2.0 V

110

10.0

100

10 100

V IC = 1.0 mA, IF = 0

V IE = 100 µA, IF = 0

nA VCE = 10.0 V, IF = 0

µA VCE = 10.0 V, IF = 0, TA = 100o C

200

µA VCE = 5.0 V, IF = 40.0 mA

µA VCE = 5.0 V, IF = 40.0 mA, TA = -55o C

µA VCE = 5.0 V, IF = 40.0 mA, TA = 100o C

2.0

µA VCE = 5.0 V, IF = 40.0 mA

0.40 V IC = 10.0 µA, IF = 40.0 mA

12.0 20.0

12.0 20.0

µs VCC = 10.0 V, IF = 20.0 mA,

RL = 1,000 Ω

µs

(6) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause

change in measurement results.

Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.

Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006

(972)323-2200

Fax (972)323-2396

13-37

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