IXFN340N07 데이터 시트보기 (PDF) - IXYS CORPORATION

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IXFN340N07

HiPerFET Power MOSFETs Single Die MOSFET

IXYS CORPORATION 

IXFN 340N07

Fig. 7. Input Admittance

250

200

150

100

TJ= -40°C

25°C

50

125°C

0

2.5 3 3.5 4 4.5 5 5.5 6

VGS - Volts

Fig. 9. Source Current vs. Source-To-

Drain Voltage

-240

-200

-160

-120

TJ=125°C

-80

TJ=25°C

-40

0

-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1

VSD - Volts

Fig. 8. Transconductance

180

150

TJ=25°

120

90

60

30

0

0 40 80 120 160 200 240

ID - Amperes

Fig. 10. Gate Charge

10

VDS=50V

8 ID=100A

IG=10m A

6

4

2

0

0

100 200 300 400 500

QG - nanoCoulom bs

100000

Fig. 11. Capacitance

f=100kHz

10000

Ciss

Coss

Crs s

1000

0

10

20

30

40

VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 12. Transient Thermal Resistance

1

0.1

0.01

0.001

1

10

100

Pulse Width - milliseconds

1000

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