P2103NV 데이터 시트보기 (PDF) - Unspecified

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P2103NV

N- & P-Channel Enhancement Mode Field Effect Transistor

Unspecified 

NIKO-SEM

N- & P-Channel Enhancement Mode

Field Effect Transistor

P2103NV

SOP-8

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

N-Ch

20

td(on)

N-Channel

P-Ch

20

VDS = 15V

N-Ch

10

tr

ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch

17

td(off)

P-Channel

N-Ch

120

nS

P-Ch

160

VDS = -15V, RL = 1Ω

N-Ch

35

tf

ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch

75

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

Pulsed Current3

ISM

N-Ch

P-Ch

N-Ch

P-Ch

3

-3

6

A

-6

Forward Voltage1

Reverse Recovery Time

IF = 1A, VGS = 0V

VSD

IF = -1A, VGS = 0V

IF = 5A, dlF/dt = 100A / µS

trr

IF = -5A, dlF/dt = 100A / µS

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

1

V

-1

15.5

nS

15.5

7.9

nC

7.9

REMARK: THE PRODUCT MARKED WITH “P2103NV”, DATE CODE or LOT #

3

OCT-22-2003

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