P4C174 데이터 시트보기 (PDF) - Semiconductor Corporation
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P4C174 Datasheet PDF : 12 Pages
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P4C174
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
Parameter
–8
–10
Min Max Min Max
tRC
Read Cycle Time
8
10
tAA
Address Access
Time
8
10
tOH
Address Change to 3
3
Output Change
–12
Min Max
12
12
3
–15
Min Max
15
15
3
–20
Min Max
20
20
3
–25
Min Max
25
25
3
tAC
Chip Enable LOW to
8
Output Valid
10
12
15
20
25
tLZ
Chip Enable LOW
3
3
3
3
3
3
to Output LOW-Z (1)
tHZ
Chip Enable HIGH
5
to Output HIGH -Z (1)
5
5
8
8
10
tOE
Output Enable LOW
5
6
6
8
10
12
to Output Valid
tOLZ
Output Enable LOW 0
0
0
0
0
0
to Output LOW-Z (1)
tOHZ
Output Enable HIGH
5
to Output HIGH -Z (1)
5
5
5
8
10
tPU
Chip Enable LOW or 0
0
0
0
0
0
Address Change to
Powerup
tpUPD
Powerup to
Powerdown
20
20
20
20
20
25
Note:
1. Transition is measured ± 200 mV from steady state voltage with Output Load B.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
READ CYCLE NO. 1 (OE CONTROLLED)(2, 3)
Document # SRAM118 REV C
Page 4 of 12
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